- 218 - pin 1 pin 3 positive ct pin 2 case SF1004G-Q1 10.0 amps. glass passivated super fast rectifiers voltage range 200 volts current 10.0 amperes features low forward voltage drop high current capability high reliability high surge curr ent capability mechanical data case: molded plastic epoxy: ul 94v-o rate flame retardant terminals: leads solderable per mil-std- 202, method 208 guaranteed polarity: as marked high temperature soldering guaranteed: 260 o c/10 seconds .16?,(4.06mm) from case. weight: 2.24 grams to-220 dimensions in inches and (millimeters) maximum ratings and elect rical characteristics rating at 25 ambient temperature unless otherwise specified. single phase, half wave, 60 hz, resistive or inductive load. for capacitive load, derate current by 20% type number symbol SF1004G-Q1 units maximum recurrent peak reverse voltage v rrm 200 v maximum rms voltage v rms 140 v maximum dc blocking voltage v dc 200 v maximum average forward rectified current .375 (9.5mm) lead length @t c = 100 i (av) 10.0 a peak forward sur g e current, 8.3 ms sin g le half sine-wave superimposed on rated load (jedec method ) i fsm 125 a maximum instantaneous forward voltage @ 5.0a @10.0a v f 1.1 1.25 v maximum dc reverse current @ t a =25 at rated dc blocking voltage @ t a =100 i r 10.0 500 ua ua reverse recovery charge(per diode) @if=2a, vr R 30v , -dif/dt=20a/us qs 9 nc thermal resistance junction to case (note 3) r jc 3.0 / w rating for fusing (t < 8.3ms) i 2 t 65 a 2 s maximum reverse recovery time (note 1) trr 25 ns typical junction capacitance (note 2) cj 10 pf operating temperature range t j -50 to +150 storage temperature range t stg -50 to +150 notes: 1. reverse recovery test conditions: i f =0.5a, i r =1.0a, i rr =0.25a 2. measured at 1 mhz and applied reverse voltage of 4.0 v d.c. 3. thermal resistance from junction to case mounted on heatsink. size of 2 in x 3 in x 0.25 in al-plate.
- 219 - ratings and characteristic curves (SF1004G-Q1) fig.1- reverse recovery time characteristic and test circuit diagram 50 noninductive non inductive oscilloscope (note 1) pulse generator (note 2) dut (+) 50vdc (approx) (-) notes: 1. rise time=7ns max. input impedance= 1 megohm 22pf 2. rise time=10ns max. sourse impedance= 50 ohms (-) (+) 10 noninductive -1.0a -0.25a 0 +0.5a trr 1cm set time base for 5/ 10ns/ cm fig.2- maximum forward current derating curve average for ward current . (a) 0 50 100 150 0 2 4 6 8 10 case temperature. ( c) o fig.3- typical reverse characteristics instantaneous reverse current .( a) 0 20 40 60 80 100 120 140 1000 0.1 1.0 10 100 percent of rated peak reverse voltage. (%) tc=25 c 0 tc=100 c 0 fig.4- maximum non-repetitive forward surge current peak for ward surge current . (a) 1 2 5 10 20 100 50 30 120 90 60 number of cycles at 60hz tc=125 c 0 8.3ms single half sine wave jedec method fig.5- typical junction capacitance capacitance.(pf) 15 2 10 20 50 100 200 500 50 60 70 80 90 100 reverse voltage. (v) tj=25 c 0 fig.6- typical forward characteristics instantaneous for ward current . (a) .4 .6 .8 1.0 1.2 1.4 1.6 1.8 .01 0.1 .03 1.0 0.3 10 3.0 30 100 forward voltage. (v) tj=25 c pulse width=300 s 1% duty cycle o
|
